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• W1497291223 abstract "Abstract The recrystallization of amorphous Ge x Si 1–x thin films on Si with uniform and with increasing Ge content is studied. The amorphous-crystal interface roughness is modified by the presence of C and O impurities before entering the Ge x Si 1–x layer. The crystallization kinetics are heavily affected by the resulting interface morphology. A minimum velocity is found in the region of the impurities where the interface starts to roughen; the strain effect induced by the Ge within the Ge x Si 1–x is overcome and the crystallization proceeds according to kinetics very similar to those for pure Si." @default.
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• W1497291223 date "1994-12-01" @default.
• W1497291223 modified "2023-09-27" @default.
• W1497291223 title "Recrystallization of strained layers with various Ge gradients and in the presence of impurities" @default.
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• W1497291223 doi "https://doi.org/10.1016/0921-5107(94)90005-1" @default.
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