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- W1497308369 abstract "High power 9xx-nm broad-area lasers with improved beam quality are required for many applications, but the physical limitations remain unclear, especially the relative importance of free-carrier and self-heating effects. Experimental data are, therefore, presented on a series of diagnostic lasers where the lateral carrier profile at the edges of the electrical contacts has been modified via implantation in order to assess its influence on beam quality. We show that carrier accumulation at the edges of the (90- <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$mu text{m}$ </tex-math></inline-formula> wide) contacts can be eliminated and that as a consequence, near and far field are narrowed and the rate of increase of beam parameter product (BPP) with self-heating reduces by 35%. Overall, the suppression of lateral carrier accumulation allows BPP < 2 mm <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$times $ </tex-math></inline-formula> mrad to be maintained to 7-W optical output, corresponding to a peak linear brightness of 3.5 W/mm <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$times $ </tex-math></inline-formula> mrad, comparable with the highest reported values for 90- <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$mu text{m}$ </tex-math></inline-formula> stripe devices." @default.
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- W1497308369 date "2015-09-01" @default.
- W1497308369 modified "2023-10-01" @default.
- W1497308369 title "High Beam Quality in Broad Area Lasers via Suppression of Lateral Carrier Accumulation" @default.
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- W1497308369 doi "https://doi.org/10.1109/lpt.2015.2443186" @default.
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