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- W1497327111 abstract "A high speed BICMOS process with a polysilicon bipolar transistor is presented. Using this technology the well optimization is outlined. Different approaches to construct the well are compared to Improve the high current behaviour of the bipolar transistor. Influences on the parasitics are discussed. Using the optimized process version bipolar transistors with a cut-off frequency of 9.5 GHz were fabricated." @default.
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- W1497327111 date "1988-09-01" @default.
- W1497327111 modified "2023-10-16" @default.
- W1497327111 title "WELL - OPTIMIZATION FOR HIGH SPEED BICMOS TECHNOLOGIES" @default.
- W1497327111 doi "https://doi.org/10.1051/jphyscol:1988420" @default.
- W1497327111 hasPublicationYear "1988" @default.
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