FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W1497509279> ?p ?o ?g. }

• W1497509279 abstract "We report the studies of AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using reactive-sputtered HfO2 as the gate dielectric and the surface passivation layer. X-ray photoemission method reveals a conduction-band offset of 1.71eV for the HfO2∕GaN heterostructure. The dielectric constant of HfO2 is estimated to be 21 by capacitance-voltage measurements. MOS-HEMTs with a 1.5-μm-long gate exhibit a maximum drain current of 830mA∕mm and a peak transconductance of 115mS∕mm, while the gate leakage current is at least five orders of magnitude lower than that of the reference HEMTs. Good surface passivation effects of HfO2 have also been confirmed by pulsed gate measurements, with MOS-HEMTs showing a significant drain current recovery from current collapse observed in HEMTs." @default.
• W1497509279 created "2016-06-24" @default.
• W1497509279 creator A5022256556 @default.
• W1497509279 creator A5067916937 @default.
• W1497509279 creator A5068875132 @default.
• W1497509279 date "2006-04-24" @default.
• W1497509279 modified "2023-09-30" @default.
• W1497509279 title "Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors" @default.
• W1497509279 cites W1592234784 @default.
• W1497509279 cites W1647014657 @default.
• W1497509279 cites W1669917242 @default.
• W1497509279 cites W1968007587 @default.
• W1497509279 cites W1987343220 @default.
• W1497509279 cites W1994870198 @default.
• W1497509279 cites W2004967694 @default.
• W1497509279 cites W2023592767 @default.
• W1497509279 cites W2029354491 @default.
• W1497509279 cites W2062386242 @default.
• W1497509279 cites W2065820983 @default.
• W1497509279 cites W2091613466 @default.
• W1497509279 cites W2091843457 @default.
• W1497509279 cites W2096217875 @default.
• W1497509279 cites W2137778525 @default.
• W1497509279 cites W2147521755 @default.
• W1497509279 doi "https://doi.org/10.1063/1.2198507" @default.
• W1497509279 hasPublicationYear "2006" @default.
• W1497509279 type Work @default.
• W1497509279 sameAs 1497509279 @default.
• W1497509279 citedByCount "174" @default.
• W1497509279 countsByYear W14975092792012 @default.
• W1497509279 countsByYear W14975092792013 @default.
• W1497509279 countsByYear W14975092792014 @default.
• W1497509279 countsByYear W14975092792015 @default.
• W1497509279 countsByYear W14975092792016 @default.
• W1497509279 countsByYear W14975092792017 @default.
• W1497509279 countsByYear W14975092792018 @default.
• W1497509279 countsByYear W14975092792019 @default.
• W1497509279 countsByYear W14975092792020 @default.
• W1497509279 countsByYear W14975092792021 @default.
• W1497509279 countsByYear W14975092792022 @default.
• W1497509279 countsByYear W14975092792023 @default.
• W1497509279 crossrefType "journal-article" @default.
• W1497509279 hasAuthorship W1497509279A5022256556 @default.
• W1497509279 hasAuthorship W1497509279A5067916937 @default.
• W1497509279 hasAuthorship W1497509279A5068875132 @default.
• W1497509279 hasBestOaLocation W14975092791 @default.
• W1497509279 hasConcept C106782819 @default.
• W1497509279 hasConcept C119599485 @default.
• W1497509279 hasConcept C127413603 @default.
• W1497509279 hasConcept C133386390 @default.
• W1497509279 hasConcept C147789679 @default.
• W1497509279 hasConcept C16317505 @default.
• W1497509279 hasConcept C165801399 @default.
• W1497509279 hasConcept C166972891 @default.
• W1497509279 hasConcept C171250308 @default.
• W1497509279 hasConcept C172385210 @default.
• W1497509279 hasConcept C17525397 @default.
• W1497509279 hasConcept C185592680 @default.
• W1497509279 hasConcept C189278905 @default.
• W1497509279 hasConcept C192562407 @default.
• W1497509279 hasConcept C195370968 @default.
• W1497509279 hasConcept C2779227376 @default.
• W1497509279 hasConcept C2779283907 @default.
• W1497509279 hasConcept C30066665 @default.
• W1497509279 hasConcept C33574316 @default.
• W1497509279 hasConcept C49040817 @default.
• W1497509279 hasConcept C79794668 @default.
• W1497509279 hasConceptScore W1497509279C106782819 @default.
• W1497509279 hasConceptScore W1497509279C119599485 @default.
• W1497509279 hasConceptScore W1497509279C127413603 @default.
• W1497509279 hasConceptScore W1497509279C133386390 @default.
• W1497509279 hasConceptScore W1497509279C147789679 @default.
• W1497509279 hasConceptScore W1497509279C16317505 @default.
• W1497509279 hasConceptScore W1497509279C165801399 @default.
• W1497509279 hasConceptScore W1497509279C166972891 @default.
• W1497509279 hasConceptScore W1497509279C171250308 @default.
• W1497509279 hasConceptScore W1497509279C172385210 @default.
• W1497509279 hasConceptScore W1497509279C17525397 @default.
• W1497509279 hasConceptScore W1497509279C185592680 @default.
• W1497509279 hasConceptScore W1497509279C189278905 @default.
• W1497509279 hasConceptScore W1497509279C192562407 @default.
• W1497509279 hasConceptScore W1497509279C195370968 @default.
• W1497509279 hasConceptScore W1497509279C2779227376 @default.
• W1497509279 hasConceptScore W1497509279C2779283907 @default.
• W1497509279 hasConceptScore W1497509279C30066665 @default.
• W1497509279 hasConceptScore W1497509279C33574316 @default.
• W1497509279 hasConceptScore W1497509279C49040817 @default.
• W1497509279 hasConceptScore W1497509279C79794668 @default.
• W1497509279 hasIssue "17" @default.
• W1497509279 hasLocation W14975092791 @default.
• W1497509279 hasOpenAccess W1497509279 @default.
• W1497509279 hasPrimaryLocation W14975092791 @default.
• W1497509279 hasRelatedWork W1497509279 @default.
• W1497509279 hasRelatedWork W1653850628 @default.
• W1497509279 hasRelatedWork W1965437800 @default.
• W1497509279 hasRelatedWork W1984137816 @default.
• W1497509279 hasRelatedWork W1998235167 @default.
• W1497509279 hasRelatedWork W2071802557 @default.
• W1497509279 hasRelatedWork W2097247147 @default.
• W1497509279 hasRelatedWork W2533596458 @default.

• next