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- W1498004419 abstract "The growth of InAs/InP strained quantum well structures with well thicknesses of 5 to 70 AA by solid source molecular beam epitaxy (MBE) is discussed. Photoluminescence has been observed from these structures over the wavelength range 1.0 to approximately=2.1 mu m, at 10 K. Multiquantum-well p-i-n diodes are characterized for optoelectronic applications from 1.0 to 2.0 mu m. Preliminary studies of InAs-channel MODFET devices are presented. >" @default.
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- W1498004419 date "2002-12-09" @default.
- W1498004419 modified "2023-09-26" @default.
- W1498004419 title "High quality pseudomorphic InAs/InP quantum wells grown by molecular beam epitaxy" @default.
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- W1498004419 doi "https://doi.org/10.1109/iciprm.1991.147420" @default.
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