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- W1498251698 abstract "Epitaxial strained Si/Si1−xGex wafers with 14% to 41% Ge were used in this study. A two‐step etching procedure was optimized to selectively delineate threading dislocations (TDs) exiting the top strained Si (sSi) layer. The first step is a short duration etch in a diluted Secco or Schimmel solution to enable a pipe to form preferentially at TDs on the top sSi layer, while allowing a thin sSi layer to remain as a cap on the underlying SiGe layer. After the TDs have been opened‐up, the sample is further etched in HF(49%):H2O2(30%):HAc =1:2:3, which selectively etches the underlying SiGe in the vicinity of TD pipes, but essentially does not attack the Si cap. Thus, the TD etch pit contrast is enhanced and well resolved under an optical microscope. We have also applied low‐temperature MOS‐EBIC to electrically examine TDs under accumulation mode bias, which allows separation of MDs and TDs, and selective imaging of electrically active TDs up to the top oxidized sSi layer." @default.
- W1498251698 created "2016-06-24" @default.
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- W1498251698 date "2005-01-01" @default.
- W1498251698 modified "2023-10-10" @default.
- W1498251698 title "Characterization of Threading Dislocations in Strained-Si/SiGe Heterostructures Using Preferential Two-Step Etching and MOS-EBIC" @default.
- W1498251698 cites W2070800319 @default.
- W1498251698 doi "https://doi.org/10.1063/1.2063032" @default.
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