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• W1498389028 abstract "Graphene has generated great interest in thescientific community since its discovery because of the uniquechiral nature of its carrier dynamics. In monolayer graphene, therelativistic Dirac spectrum for the carriers results in anunconventional integer quantum Hall effect, with a peculiar LandauLevel at zero energy. In bilayer graphene, the Dirac-like quadraticenergy spectrum leads to an equally interesting, novel integerquantum Hall effect, with a eight-fold degenerate zero energyLandau level. In this thesis, we present transport studies at highmagnetic field on both monolayer and bilayer graphene, with aparticular emphasis on the quantum Hall (QH) effect at the chargeneutrality point, where both systems exhibit broken symmetry of thedegenerate Landau level at zero energy. We also present data onquantum Hall edge transport across the interface of a graphenemonolayer and bilayer junction, where peculiar edge state transportis observed. We investigate the quantum Hall effect near the chargeneutrality point in bilayer graphene, under high magnetic fields ofup to 35~T using electronic transport measurements. In the highfield regime, we observe a complete lifting of the eight-folddegeneracy of the zero-energy Landau level, with new quantum Hallstates corresponding to filling factors $nu=0$, 1, 2 and 3.Measurements of the activation energy gap in tilted magnetic fieldssuggest that the Landau level splitting at the newly formed$nu=$1, 2 and 3 filling factors does not exhibit low-energy spinflip excitation. These measurements are consistent with theformation of a quantum Hall ferromagnet. In addition, we observedinsulating behavior in the two terminal resistance of the $nu=$0state at high fields. For monolayer graphene, we report onmagneto-resistance measurements at the broken-symmetry of thezero-energy Landau level, using both a conventional two-terminalmeasurement of suspended graphene devices, which is sensitive tobulk and edge conductance, and a Corbino measurement on highmobility on-substrate devices, which is sensitive to the bulkconductance only. At $nu=0$, we observe a vanishing conductancewith increasing magnetic fields in both cases. By examining theresistance changes of this insulating state with varyingperpendicular and in-plane fields, we probe the spin-activecomponents of the excitations in total fields of up to 45 Tesla.Our results strongly suggest that the $nu=0$ quantum Hall state insingle layer graphene is not spin polarized, while a spin-polarizedstate with spin-flip excitations forms at $nu=1$. For monolayerand bilayer graphene junction system, we first present a surfacepotential study across the monolayer/bilayer interface. Then wepresent experimental investigations of the edge state transitionacross the interface in the quantum Hall regime. Both monolayergraphene (MG) and bilayer graphene (BG) develop their own Landaulevels under high magnetic field. While transport measurements showtheir distinct quantum Hall effects in the separate parts of the…" @default.
• W1498389028 created "2016-06-24" @default.
• W1498389028 creator A5047242385 @default.
• W1498389028 date "2012-01-01" @default.
• W1498389028 modified "2023-09-23" @default.
• W1498389028 title "Quantum Hall transport in graphene and its bilayer" @default.
• W1498389028 doi "https://doi.org/10.7916/d8np2bjw" @default.
• W1498389028 hasPublicationYear "2012" @default.
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