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- W1498696785 abstract "SiC bulk material is manufactured in the desired shape from an organopolysiloxane‐based pre‐ceramic polymer by pyrolysis. For an evaluation prototype, an emitter was made in form of a 7’’ tube with 1.5’’ diameter for operation at 1400 °C–1700 °C in conjunction with a GaSb photovoltaic cell (Eg=0.67 eV). The spectral dependence of the emittance of the SiC material in this temperature range was determined between 1.2 μm and 3.2 μm. Additionally, the surface morphology for a high density and a porous low density silicon carbide specimen are compared using SEM micrography. The range of material properties obtainable with this manufacturing process, and the high emissivity of the SiC, suggest that this material may be suitable for the emitter and burner elements in a thermophotovoltaic converter." @default.
- W1498696785 created "2016-06-24" @default.
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- W1498696785 date "1995-01-01" @default.
- W1498696785 modified "2023-10-18" @default.
- W1498696785 title "Silicon carbide emitter and burner elements for a TPV converter" @default.
- W1498696785 cites W2132905138 @default.
- W1498696785 doi "https://doi.org/10.1063/1.47060" @default.
- W1498696785 hasPublicationYear "1995" @default.
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