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• W1500529059 abstract "We study the influence of multiple oxygen vacancy traps in the percolated dielectric on the postbreakdown random telegraph noise (RTN) digital fluctuations in HfO2-based metal-oxide-semiconductor transistors. Our electrical characterization results indicate that these digital fluctuations are triggered only beyond a certain gate stress voltage. First-principles calculations suggest the oxygen vacancies to be responsible for the formation of a subband in the forbidden band gap region, which affects the triggering voltage (VTRIG) for the RTN fluctuations and leads to a shrinkage of the HfO2 band gap." @default.
• W1500529059 created "2016-06-24" @default.
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• W1500529059 date "2010-04-26" @default.
• W1500529059 modified "2023-10-01" @default.
• W1500529059 title "Role of oxygen vacancies in HfO2-based gate stack breakdown" @default.
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• W1500529059 doi "https://doi.org/10.1063/1.3416912" @default.
• W1500529059 hasPublicationYear "2010" @default.
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