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- W1501886167 abstract "A low turnoff loss snapback-free reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with a novel collector structure is demonstrated. The n-collector is partially enclosed by a floating p-layer (p-float) which acts as a barrier for electrons at low current in the forward conduction state and contributes to the snapback-free forward conduction characteristics. The p-float makes the proposed device feature double n-p-n electron extraction paths, the n-drift/p-float/n-collector (n-p-n1, n-drift is emitter) and the n-buffer/p-float/n-collector (n-p-n2, n-buffer is emitter), both of which can be activated during turnoff. As numerical simulations show, the two n-p-n extraction paths, especially n-p-n2 which is more effective than n-p-n1, are favourable to the ultra-low turnoff loss." @default.
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- W1501886167 date "2012-01-01" @default.
- W1501886167 modified "2023-10-18" @default.
- W1501886167 title "Low turnoff loss reverse-conducting IGBT with double n-p-n electron extraction paths" @default.
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- W1501886167 doi "https://doi.org/10.1049/el.2012.0260" @default.
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