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- W1503648987 abstract "We have investigated the temperature dependencies of charge carrier densities and Hall mobilities in tensile strained Si1−yCy and in compressively strained Si1−x−yGexCy layers. In both cases, the measured charge carrier densities at room temperature are not affected substantially by the addition of a small concentration of carbon (<1%) under identical growth conditions and dopant fluxes. The measured Hall mobilities monotonically decrease with increasing carbon content for electrons in Si1−yCy, and for holes in Si1−x−yGexCy, respectively. Our results indicate that electrically active defects are formed with the addition of carbon. These defects are presumably connected with carbon/Si interstitials or other C-related complexes. It seems to be difficult to attribute the formation of those electrically active defects solely to contaminations originating from the used carbon evaporation source. We observed that donor- and acceptor-like defects are formed in Si1−yCy as well as in Si1−x−yGexCy layers with roughly a constant ratio, independent of source temperature." @default.
- W1503648987 created "2016-06-24" @default.
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- W1503648987 date "1997-11-15" @default.
- W1503648987 modified "2023-10-16" @default.
- W1503648987 title "Charge transport in strained Si1−yCy and Si1−x−yGexCy alloys on Si(001)" @default.
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- W1503648987 doi "https://doi.org/10.1063/1.366364" @default.
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