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- W1504204177 abstract "This chapter discusses the transport and defect properties of intrinsic and boron-doped diamond. To characterize chemical vapor deposition diamond, a variety of experiments is applied. Primary techniques for transport properties are temperature-dependent dark conductivity, Hall effect, transient and spectrally resolved photoconductivity (SPC) measurements. Optical investigations have been applied using transmission/ reflectivity experiments and photo-thermal deflection spectroscopy (PDS). To identify nitrogen and carbon defects, electron paramagnetic resonance techniques are used. On boron-doped diamond, capacitance-voltage measurements, deep-level transient spectroscopy (DLTS), optically excited DLTS techniques and SPC experiments have been used to characterize the acceptor properties of boron and defects as well as the interaction of boron with deuterium. These experiments demonstrate that the electronic properties of diamond are still either fully characterized or fully understood. Although, research on diamond is now nearly half a century old, new and exciting features are being detected. The understanding of the electronic properties of diamond is required to further optimize growth and doping qualities, to produce a genuinely new wide-band-gap semiconductor for applications in electronics, ranging from electrochemistry, ultraviolet sensors and light emmiting diode, to bio-electronic devices." @default.
- W1504204177 created "2016-06-24" @default.
- W1504204177 creator A5018224425 @default.
- W1504204177 date "2003-01-01" @default.
- W1504204177 modified "2023-09-24" @default.
- W1504204177 title "Chapter 6 Transport and defect properties of intrinsic and boron-doped diamond" @default.
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- W1504204177 doi "https://doi.org/10.1016/s0080-8784(03)80008-x" @default.
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