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- W1504455207 abstract "In this work, the advanced non-volatile memory design based on silicon nano-crystals instead of conventional continuous floating gate was explored The multilayer Al/TiN/Al2O3/Si-nano-crystals/Al2O3/SiO2/Si(100) structure was realized. The functional layer stack (TiN/Al2O3/Si-nano-crystals/Al2O3) was deposited in a cluster system without vacuum break, using atomic-layer-deposition (ALD) (Al2O3 and TiN films) and low-pressure chemical-vapor-deposition (LPCVD) (Si nano-crystals) methods. The details of the process flow are discussed. The physical characterization and the electrical measurements of the multilayer structure are presented." @default.
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- W1504455207 date "2006-11-23" @default.
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- W1504455207 title "Memory devices with encapsulated Si nano-crystals: Realization and Characterization." @default.
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