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- W1505010471 abstract "A high density and high speed 1Mb EPROM has been developed by utilizing both the advanced 1.0 ?m minimum design rule technology and the Ti silicidation technology. The sheet resistance has been reduced to about 2?/? by the Ti silicidation technology without degrading the programming, erase and retention characteristics. The low sheet resistance word line and the size reduction have been combined to achieve the fast access time of 100ns." @default.
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- W1505010471 date "1984-09-01" @default.
- W1505010471 modified "2023-09-28" @default.
- W1505010471 title "A High Speed 1mb Eprom with Ti Silicided Gate" @default.
- W1505010471 hasPublicationYear "1984" @default.
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