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• W1505463053 abstract "Using magnetron cosputtering of SiO2, Ge, and Si targets, Si-based SiO2:Ge:Si films were fabricated for exploring the influence of Si target proportion (PSi) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si1−xGex (nc-Si1−xGex). At low PSi and Ta higher than 800°C, no nc-Si1−xGex but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO2 matrix. At moderate PSi, nc-Si1−xGex begins to be formed at Ta=800°C and coexists with nc-Ge at Ta=1100°C. At high PSi, it was disclosed that both optical phonon frequency and lattice spacing of nc-Si1−xGex increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si1−xGex. This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge1−xSix in the ternary matrix." @default.
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• W1505463053 date "2004-10-28" @default.
• W1505463053 modified "2023-10-18" @default.
• W1505463053 title "Formation, structure, and phonon confinement effect of nanocrystalline Si1−xGex in SiO2‐Si‐Ge cosputtered films" @default.
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• W1505463053 doi "https://doi.org/10.1063/1.1772888" @default.
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