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- W1507400981 abstract "We have studied the electronic properties of the family of layer compounds InSe, GaSe and GaS by the empirical pseudopotential method. Both atomic positions, which are not accurately known from experiment, and atomic pseudopotentials are adjusted to fit the main optical and photoemission data with the further constraint that the same Se potential should be valid for InSe and GaSe, and the same Ga potential for GaS and GaSe. The charge densities have also been calculated and show that the ionicity of InSe is greater than that of GaS and GaSe, in good agreement with the Phillips electronegativity scale which predicts that InSe is 1.2 and 1.3 times more ionic than GaS and GaSe, respectively. The calculated band structures and charge densities allow a detailed discussion of the integrated and angle-resolved photoemission data as well as of the optical properties of these compounds." @default.
- W1507400981 created "2016-06-24" @default.
- W1507400981 creator A5049963328 @default.
- W1507400981 date "1981-07-01" @default.
- W1507400981 modified "2023-10-01" @default.
- W1507400981 title "Electronic properties of the layer III–VI semiconductors. A comparative study" @default.
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- W1507400981 doi "https://doi.org/10.1007/bf02721299" @default.
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