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• W1508036721 abstract "Polarization junction platforms have high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. Sheet resistance measurements in a wide temperature range (6–460 K) revealed that 2DHG and 2DEG resistances were monotonically enhanced with the temperature reduction. On the platform, monolithic operations of GaN-based devices including high-voltage n-channel (N-ch) transistors, N-ch Schottky diodes, low-voltage N-ch transistors and p-channel transistors has been demonstrated." @default.
• W1508036721 created "2016-06-24" @default.
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• W1508036721 date "2015-05-01" @default.
• W1508036721 modified "2023-09-23" @default.
• W1508036721 title "GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform" @default.
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• W1508036721 doi "https://doi.org/10.1109/ispsd.2015.7123463" @default.
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