Matches in SemOpenAlex for { <https://semopenalex.org/work/W1509192972> ?p ?o ?g. }
- W1509192972 endingPage "11" @default.
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- W1509192972 abstract "Abstract Recent development of high κ dielectric oxides on (In) GaAs is reviewed in the fields of electronic structure and electric performance; this includes studies of (In) GaAs surfaces with various surface reconstructions, different orientations, and Indium contents, and of high κ/(In) GaAs interfaces. The oxide deposition was carried out using atomic‐layer deposition ( ALD ) and molecular beam epitaxy ( MBE ) via ex‐situ or in‐situ methods. For the former approach, the semiconductor surfaces prior to the oxide deposition were obtained via chemical, arsenic‐cap or annealing treatments. For the latter, the high k's were deposited on pristine freshly MBE ‐grown (In) GaAs surfaces without any treatments. Surface being treated or not clearly determines the quality of the oxide interface which delivers different interfacial electronic structure and electric performance. Without exception, the ex‐situ treated samples show remnant native oxides, which are never found in the in‐situ samples. The electronic structure has been investigated using photoemission measurements, in which the photon energy was provided by X ‐ray and synchrotron radiation. The discussion on high κ/(In) GaAs interfaces has been further extended to the electrical characterization including extraction of interfacial trap densities ( D it 's). Especially, the distinct electrical characteristics of the In 0.2 Ga 0.8 As metal‐oxide‐semiconductor capacitors ( MOSCAPs ) using MBE ‐ Ga 2 O 3 ( Gd 2 O 3 ) and ALD ‐ Al 2 O 3 as the gate are elucidated. Finally, a summary and bench‐marking of the recent advances on enhancement mode III ‐ V (In) GaAs MOSFETs is given, which reveals the great potential of inversion‐channel (In) GaAs MOSFETs for ultimate complementary MOS ( CMOS ) applications." @default.
- W1509192972 created "2016-06-24" @default.
- W1509192972 creator A5020561499 @default.
- W1509192972 creator A5037419608 @default.
- W1509192972 creator A5042730250 @default.
- W1509192972 creator A5065370235 @default.
- W1509192972 creator A5068066074 @default.
- W1509192972 creator A5075522904 @default.
- W1509192972 date "2014-04-25" @default.
- W1509192972 modified "2023-09-25" @default.
- W1509192972 title "Semiconductor‐insulator Interfaces, High κ Dielectrics on ( <scp>In</scp> ) <scp>GaAs</scp>" @default.
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