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• W1509305976 abstract "One-dimensional nanowires represent one of the most promising possibilities for the application of nanotechnology to a broad selection of areas. This field has been rapidly expanding over the past decade, with new methods of production, mechanisms of formation, measurements of properties and potential applications being published every day. Semiconductor nanowires in particular represent an exciting area of research, with potential to revolutionize the areas of electronics and optoelectronics. Several different devices based on 1D nanostructures have been demonstrated including light emitting diodes (LEDs) [1-5], field-effect transistors (FETs) [6-9], biosensors [10, 11], and solar cells [12, 13]. Considerable work remains before 1D nanostructures can be integrated into existing semiconductor technology, but the up-scaling problems are being addressed by several research groups [14]. In addition to biosensors, nanowires might also be used for other medical applications in the future. Patterned nanowire arrays have been demonstrated to work as guides and rectifiers of nerve cells on a substrate, which opens up new possibilities for neural network design [15]. Techniques to produce nanowires are normally divided into top-down and bottom-up methods. Nanowires can be produced by lithographically carving out the structures from the desired bulk material, referred to as top-down production. The major drawback of this method is that the surfaces of the structures are damaged during the process resulting in nanowires with a poor crystal quality. In addition the lithographic techniques may not be able to produce sufficiently small structures for further downscaling of devices. In order to produce small enough nanowires of high enough crystal quality, so called bottom-up production can instead be used. This means that the nanowires are formed by self-organization atom by atom in a highly controllable manner. A variety of bottom-up methods have been used to produce nanowires, usually classified into solution methods and vapor phase methods [16]. The solution methods include pure solution chemistry methods as well as electrochemical deposition methods in combination with templates [17]. The major advantage with such a solution-based method is the ability to produce large amounts of material at low cost. On the other hand solution methods offer poor control of nanowire dimensions and positioning, properties crucial for device applications. Electrochemical deposition also has the drawback of generally poor nanowire crystal quality with a high number of defects, which is a major limitation in device applications, especially in the field of optics [17]. Vapor phase methods are extensively used for nanowire production [16], and include physical methods such as laser ablation and thermal evaporation, as well as chemical methods. In contrast to solution methods, they are steady-state growth techniques which provide a better control of the growth and morphology of the wires. Vapor phase methods, especially vapor phase epitaxy (VPE), dominate nanowire growth today and are most commonly used for production of semiconductor device structures [18]. Although these techniques are rather expensive, they are especially advantageous in two ways. First of all a huge range of vapor phase precursors exist, making it possible to grow nanowires of many different types of materials. Secondly, very high control of the growth process is possible, enabling the growth of complex nanowire structures. In addition to the many different nanowire production methods existing, nanowires of a variety of materials have been produced. Among them metal nanowires, oxide nanowires, metal carbide nanowires, metal chalcogenide nanowires, and semiconductor nanowires have been demonstrated. For an extensive review of the materials systems used to produce nanowires see for example Rao et al. [16]. Here we discuss mainly semiconductor nanowires with the emphasis on III-V" @default.
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• W1509305976 date "2013-01-01" @default.
• W1509305976 modified "2023-09-23" @default.
• W1509305976 title "Nanowires for solar cell applications" @default.
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