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- W1510698436 abstract "The authors report studies on the inversion-layer mobility in n- and p-channel MOSFETs with 10/sup 15/ to 10 /sup 18/ cm/sup -3/ substrate impurity concentrations. The validity and limitations of the universal relationship between the inversion-layer mobility and the effective normal field (E/sub eff/) were examined. Differences have been found in E/sub eff/ dependence between electron and hole mobility. A marked deviation from the universal curve due to substrate impurity scattering has been observed at low carrier concentration. The results suggest that by adding a term for the surface roughness scattering and the deviation due to Coulomb scattering to the universal curves, a more accurate description of inversion-layer mobilities can be realized over a wide range of substrate impurity concentration. The mobility degradation caused by carrier injection also has been studied.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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- W1510698436 date "2003-01-06" @default.
- W1510698436 modified "2023-10-05" @default.
- W1510698436 title "On the universality of inversion-layer mobility in n- and p-channel MOSFETs" @default.
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- W1510698436 doi "https://doi.org/10.1109/iedm.1988.32840" @default.
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