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- W1512861569 abstract "The chapter first compares convergent beam electron diffraction (CBED) and nanobeam diffraction (NBD) techniques in a transmission electron microscope (TEM), applied for strain determination on a fully processed pMOS transistor integrating the SiGe source and drain regions. Then, the chapter correlates strain results with electrical tests performed on the same devices. Finally, the effect of gate length on stress state in the Si channel is discussed and a comparison between numerical solutions and experimental measurements is performed. Controlled Vocabulary Terms electron diffraction; MOSFET; Silicon alloys; transmission electron microscopes" @default.
- W1512861569 created "2016-06-24" @default.
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- W1512861569 date "2012-12-17" @default.
- W1512861569 modified "2023-10-14" @default.
- W1512861569 title "Quantitative Strain Measurement in Advanced Devices: A Comparison Between Convergent Beam Electron Diffraction and Nanobeam Diffraction" @default.
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- W1512861569 doi "https://doi.org/10.1002/9781118579022.ch3" @default.
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