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• W1513002625 abstract "GaN and related III–V nitride materials have been investigated for various applications in electronic and optoelectronic devices, such as blue and green light-emitting diodes, laser-diodes, and high-power and high-temperature electronic devices [1,2]. Although the growth of group III-nitride materials has progressed rapidly, it is still difficult to obtain high-quality layers due to the large dislocations densities and deep levels inherited from the lattice mismatch between the GaN layer and the sapphire substrate. Much improved device performance could be facilitated by the development of high quality freestanding GaN substrates with tailored electrical properties. So far, the homoepitaxy of GaN layers on GaN substrate grown at high temperatures and at high hydrostatic pressures has been successfully applied to obtain high-quality GaN layers [3,4]. However, other faster and cheaper methods of the grown are still sought-after. One of the rapidly advancing sources of thick, freestanding GaN wafers is hydride vapour phase epitaxy (HVPE) [5]. This method makes possible a fast growth of GaN layers with the thickness of a few hundreds of micrometers. Such layers can be separated from the sapphire substrate by laser-induced lift-off [6,7]. Very important issue for GaN layers is the polarization of GaN surface. The c-plane sapphire on which GaN layers are grown and GaN do not share the same atomic stacking order. Consequently, the crystal direction [0001] of a GaN layer can either be parallel or antiparallel to the growth direction, leading to epilayers with two different polarities, Gaand N-polar layers. Previous investigations showed that the two polar layers have very different structural and electrical properties [8–16]. A Ga-polar layer has a relatively smoother and more stable surface [9–10], lower impurity contamination [11], and different height of Schottky barrier [12–15]. The photoluminescence properties of Ga-polar layers also seem better than N-polar layers [16, 17]. Therefore, it is often believed that the overall quality of the Ga-polar layer is better than N-polar layers. Optical properties of both Gaand N-polar thick GaN layers grown by HVPE are investigated by using photoreflectance (PR) and photoluminescence (PL) spectroscopies in this paper. On the basis of the analysis of PR spectra we are able to estimate the surface electric field [18,19] in GaN layers. The advantages of PR technique are its contactless character and high sensitivity even at room temperature [19,20]." @default.
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• W1513002625 date "2004-01-01" @default.
• W1513002625 modified "2023-09-28" @default.
• W1513002625 title "Photoreflectance and photoluminescence of thick GaN layers grown by HVPE" @default.
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