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- W1514785621 abstract "Thin films of Te48-yAs30+yGe10Si12 (y = 0,5,10,15) of different thicknesses are deposited on glass substrates by thermal evaporation. X-ray diffraction revealed the amorphous nature of both powder and thin-film forms. The current-voltage characteristics in the temperature range 295-358 K and thickness range 75-300 nm are ohmic in the lower field regime followed by non-ohmic behaviour in the high-field regime, which has been analysed by the anomalous Poole-Frenkel effect. The temperature dependence of ohmic current is that of a thermally activated process with an activation energy increasing with increasing As content. The effect of composition and temperature on the dielectric constant have been studied. The dielectric constant increases with increasing As content." @default.
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- W1514785621 date "2000-09-21" @default.
- W1514785621 modified "2023-09-25" @default.
- W1514785621 title "Conduction mechanism in the off-state of thin Te48-yAs30+yGe10Si12films" @default.
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- W1514785621 doi "https://doi.org/10.1088/0022-3727/33/19/302" @default.
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