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- W1516396543 abstract "We investigated to decrease the leakage current of SiNx film by employing a N/sub 2/ plasma treatment. The insulating layers were prepared by two step process; the N/sub 2/ plasma treatment and then PECVD SiNx deposition with SiH/sub 4/ and N/sub 2/ gases. To prove the influence of the N/sub 2/ plasma treatment, the Si substrate was exposed to the plasma, which was generated in N/sub 2/ gas ambient. Without plasma treatment SiNx film grows at the rate of 7.03 nm/min, which has a refractive index of 1.77 and hydrogen content of 2.16 /spl times/ 10/sup 22/ cm/sup -3/ for N/sub 2//SiH/sub 4/ gas flow ratio of 20. The obtained films were analyzed in terms of deposition rates, refractive index, hydrogen concentration, and electrical properties. By employing N/sub 2/ plasma treatment, interface traps such as mobile charges and injected charges were removed and hysteresis of capacitance-voltage (C-V) disappeared. We observed that the plasma treated samples had the leakage current density reduced by 2 orders compared to the sample having no plasma treatment." @default.
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- W1516396543 date "2003-05-18" @default.
- W1516396543 modified "2023-09-27" @default.
- W1516396543 title "N/sub 2/ plasma treatment effects in silicon nitride film formation for silicon surface passivation" @default.
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