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• W1516823000 abstract "Since the isolation of graphene and other two-dimensional (2D) materials, such as hexagonal boron nitride (h-BN), these just one atom layer thick materials have spurred a flurry of investigations into their structural properties, morphology and chemistry [1, 2]. Graphene is a 2D crystalline form of carbon and a basic building block for carbon allotropes such as fullerenes, carbon nanotubes and graphite [3]. In graphene, carbon atoms are packed in a planar honeycomb network. The unit cell of single-layer graphene consists of two carbon atoms, separated by 1.42 A, with a lattice constant of 2.46 A. Each atom has s, px and py orbitals and is bonded to three neighbor atoms in the lattice, forming an sp2 atomic network. The pz orbitals overlap between neighboring atoms resulting in so-called filled π and empty π* states, which respectively form the valence and the conduction bands in graphene. However, socalled Bernal (AB-) stacked double layer graphene has four electrons in the unit cell: in this configuration, the individual layers are stacked but shifted with respect to one-another, so that the carbon atoms in one layer sit on top of the empty hexagon centers in the underlying layer. Due to the absence of any measurable bandgap in both single and double layer graphene these materials are often called zero-gap semiconductors. The lack of a bandgap is a serious limitation to the use of graphene in electronics as switching off any graphene-based device would be extremely difficult. Additionally, researchers have shown that the substrate on which graphene layers are placed has dramatic effects on its transport properties. SiO2/Si substrates were used for initial graphene devices [1]. However, due to their surface roughness and to the presence of charged impurities graphene devices built directly on SiO2 substrates could not demonstrate any marked improvement over more traditional designs: they were seemingly never able to utilize the intrinsic properties of graphene [4]. Other substrates (2D materials)" @default.
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• W1516823000 date "2013-07-31" @default.
• W1516823000 modified "2023-09-30" @default.
• W1516823000 title "Atomic Structure of Graphene and h-BN Layers and Their Interactions with Metals" @default.
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• W1516823000 doi "https://doi.org/10.5772/56640" @default.
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