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- W1518309904 abstract "This chapter discusses molecular beam epitaxial growth of self-assembled indium arsenide/gallium arsenide (InAs/GaAs) quantum dots. The atom-like density of states in quantum dots should drastically improve the performance of optical devices, especially semiconductor lasers, and should also be instrumental in the development of novel optoelectronic and single-electron devices. Numerous challenges in quantum-wire and quantum-dot fabrication have been reported during the past two decades. The most straightforward technique is the quantum-well structures through a combination of high-resolution electron beam lithography and dry or wet etching. Self-assembling—a novel way to fabricate quantum dots—is the most promising approach in overcoming the various problems with previous techniques. This process exploits the three-dimensional island growth of highly lattice-mismatched semiconductors. In columnar-shaped quantum dots, where both narrow spectrum width and high-emission efficiency are obtained, low-threshold and highly efficient operation of quantum-dot lasers can be achieved successfully." @default.
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- W1518309904 date "1999-01-01" @default.
- W1518309904 modified "2023-09-25" @default.
- W1518309904 title "Chapter 2 Molecular Beam Epitaxial Growth of Self-Assembled InAs/GaAs Quantum Dots" @default.
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- W1518309904 doi "https://doi.org/10.1016/s0080-8784(08)62528-4" @default.
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