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• W1518328082 abstract "Today, the light absorber of almost all installed photovoltaic (PV) modules is made of single or multi crystalline silicon (c-Si or mc-Si). However, due to the reduced costs per installed power, a trend exists towards thin film cells since a few years. Thus, the future's aim of this work's investigations is to realize printable PV cells with a thin film absorber made from Si nanoparticles (NP) solely. Si is chosen, because it is non-toxic and an abundant resource. The particle form is selected, because NP can be dispersed, thus making them printable, resulting in a high material-efficiency for the future application. As a first step, in this work c-Si substrates were coated with highly doped Si NP and via laser annealing, a doped substrate layer was created. For the annealing, a continuous wave, infra red (IR, wave length λ = 808nm) and a pulsed, ultra violet (UV, λ = 248nm) laser were available. For both lasers, electrical (four point conductance) and analytical (SIMS / ECV) measurements proved a successful incorporation of dopants into the substrate. While the IR laser created doping depths of approx. 100µm, for the UV laser they were determined to be approx. 200nm. By applying this method on doped substrates and complementary doped NP, pn-junctions could be realized that exhibit a PV effect. The thin emitter layer (≈doping depth) is one important reason for the higher maximum conversion efficiencies η of the UV laser annealed samples (η ≈ 6%) when compared to the IR laser annealed ones (η ≈ 2%). Chemical and structural defects are supposed to be the major reason for the low conversion efficiencies when compared with c-Si PV. By reducing them, a considerable efficiency increase is expected. Due to the too big doping depth, the IR laser was excluded from further experiments. For the production of PV cells, the UV laser NP doping method may also be interesting to replace the aluminium (Al) from the standard back surface doping process: A reduction of the substrate thickness of future PV generations, would lead to a bending of the substrate due to the different thermal expansion coefficients of Si and Al. Using the presented technique, a back surface doping could be realized on semi-finished mc-Si PV cells; however, so far it is not certain, whether this technique can really create similar or even higher efficiencies as the standard process. Nevertheless, this method can be interesting for the PV industry already today, because a substrate bending should be prevented and an independent handling of the front and the back side is possible. After the feasibility of Si substrates doping, fundamental experiments were conducted to create pn-junctions form Si NP solely, in a second step. Thus, pn-samples were created by spark-plasma sintering (SPS) of p- on n-type NP material on the one hand and by successive spin coating of p- and n-type dispersions and their laser annealing on the other hand. While the SPS experiments primary aimed to get a directer insight of the pn-junction created only from NP, the spin coating method represents a much more application oriented way. In both cases, an electromotive force was measured, whereas it is not finally clarified, whether its origin really is PV. However, the success to realize conductive layers on insulating substrates is interpreted as a first step towards the future's aim of printable Si PV from NP." @default.
• W1518328082 created "2016-06-24" @default.
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• W1518328082 date "2015-02-18" @default.
• W1518328082 modified "2023-09-27" @default.
• W1518328082 title "Photovoltaics with Silicon Nanoparticles" @default.
• W1518328082 hasPublicationYear "2015" @default.
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