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- W1518419982 abstract "The molecular beam epitaxial growth of (100) Hg0.8Cd0.2Te epilayers has been systematically investigated in order to optimize the growth parameters and in particular the Hg/Te flux ratio. Both the pyramidal hillock density and the mobility depend on the Hg/Te flux ratio. A minimum in the hillock density correlates well with the largest mobilities. As is well known, electrical properties are strongly influenced by structural defects. Structural defects due to non-stoichiometry, i.e. vacancies and antisites, can be largely reduced by optimizing the Hg/Te flux ratio. It is shown that an optimum Hg/Te flux ratio exists within a narrow range between 270 and 360 at the growth temperature of 180 degrees C, in contrast with the larger range of the Hg/Te flux ratio over which single-crystal growth could be maintained. The x values of the Hg1-xCdxTe epilayers were determined from the E0 gap dependence as well as from the E1 gap dependence. The difficulties encountered in determining the x value from normal transmission curves, i.e. from E0(x), due to the Burstein-Moss shift are discussed." @default.
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- W1518419982 title "Molecular beam epitaxial growth of (100) Hg<sub>0.8</sub>Cd<sub>0.2</sub>Te on Cd<sub>0.96</sub>Zn<sub>0.04</sub>Te" @default.
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- W1518419982 doi "https://doi.org/10.1088/0268-1242/8/1s/047" @default.
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