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- W1518575738 abstract "Publisher Summary This chapter reviews the state-of-the-art of growth and doping of ZnSe-based semiconductors in metallorganic vapor-phase epitaxy (MOVPE). It discusses the future prospects of this growth technique for device applications. Using Lewis acid-based adducts of dialkyl-zinc with dialkyl-selenide it is possible to grow ZnSe or ZnS, respectively, at about 300°C. However, the unwanted premature reactions are not completely eliminated with these precursors. A general strategy for the development of new group-VI precursors has been to weaken the Se–C bonds by replacing methyl and ethyl groups with substituents forming stable radicals. This has allowed reduction in decomposition temperature of the precursor, resulting in low-temperature growth. Device-oriented research works by MOVPE have contributed to photo-pumped lasers and light-emitting diodes (LEDs). Toward device applications, the MOVPE technology has shown continuing progress. It seems that structural quality of quantum wells (QWs) grown by MOVPE has already been comparable to that by molecular beam epitaxy (MB) and that the most serious problem to be solved lies in reliable and low resistive p -type doping." @default.
- W1518575738 created "2016-06-24" @default.
- W1518575738 creator A5060383340 @default.
- W1518575738 creator A5062647657 @default.
- W1518575738 date "1997-01-01" @default.
- W1518575738 modified "2023-09-25" @default.
- W1518575738 title "Chapter 2 Growth and Characterization of ZnSe-based II-VI Semiconductors by MOVPE" @default.
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- W1518575738 doi "https://doi.org/10.1016/s0080-8784(08)60192-1" @default.
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