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• W1518735521 abstract "Silicon is the desired material, because silicon optoelectronics will open the door to faster data transfer and higher integration densities at very low cost. Silicon microphotonics has boomed these last years. In addition, silicon, the most important elemental semiconductor, crystallizes in the diamond structure. The diamond lattice consists of two interpenetrating face centered cubic Bravais lattices displaced along the body diagonal of the cubic cell by one quarter of the length of the diagonal. Nowadays, hydrogenated nanostructured silicon with grains in nanometer size has attracted more attention in optoelectronic and microelectronic devices for its superior properties (Kanicki, 1991, 1992; Canham , 1990 ; Lin et al., 2006, Funde et al., 2008, Cheng et al., 2008). Moreover, great efforts have been devoted to photoluminescence of siliconbased materials for developing integrated optoelectronics with the standard silicon verylarge-scale integration technology (Canham, 1990). For example, to embed the nanometersized silicon within an insulating host will enhance the quantum confinement effect, which spreads the band gap of silicon for photoluminescence emission (Brongersma et al., 1998). During the last few years, various methods were proposed to embed nanometersized silicon, such as implantation of silicon into silicon dioxide (Brongersma et al., 1998), Si/SiO2 superlattice structure (Photopoulos et al., 2000; Benyoucef, & Kuball, 2001), thermaloxidized nanocrystalline silicon (Jeon et al., 2005). At the same time, these techniques suffer from complicated and high temperature process, thus unsuitable for developing low cost array or flexible optoelectronic nanocrystalline silicon devices. Nanocrystalline silicon has been synthesized by several techniques such as microwave or laser induced decomposition of silane (SiH4) like precursors (Takagi et al. 1990; Ehbrecht et al., 1995), pulsed-laser deposition of silicon (Werwa et al., 1994), low pressure chemical vapor deposition (Nakajima et al., 1996), electrochemical etching of silicon wafers (Canham , 1990; Belomoin et al., 2002), ion implantation of Si+ (Iwayama et al., 1994), cosputtering of silicon and silicon dioxide (Zhang et al., 1995), and plasma-enhanced chemical vapor deposition (Inokuma et al., 1998)." @default.
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• W1518735521 date "2011-09-26" @default.
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• W1518735521 title "Air Exposure Improvement of Optical Properties of Hydrogenated Nanostructured Silicon Thin Films for Optoelectronic Application" @default.
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• W1518735521 doi "https://doi.org/10.5772/20312" @default.
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