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- W1519936730 abstract "The three main gettering techniques (preoxidation gettering on the other side, silicon gettering by segregation, internal gettering) are considered. The techniques are compared in relation to: extended defects, impurities, process compatibility and residual leakage current." @default.
- W1519936730 created "2016-06-24" @default.
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- W1519936730 date "1984-01-01" @default.
- W1519936730 modified "2023-09-25" @default.
- W1519936730 title "Gettering for VLSI" @default.
- W1519936730 doi "https://doi.org/10.1063/1.34819" @default.
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