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• W1520171640 abstract "One of the most important features for ferroelectric material is fast write at low voltage. This feature is used in a 256 kb nonvolatile memory that operates at 3 V power supply with a read/write time of 100 ns. Active current is 3 mA at 200 ns cycle time at 3 V for battery operation. The cell consists of 1 transistor and 1 capacitor per bit (1T1C) permitting a high level of integration. For low-voltage low-power operation, use is made of a preset reference-cell circuit, wordline boost circuits with a ferroelectric boosting capacitor and a divided-cell plate circuit.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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• W1520171640 date "2002-12-17" @default.
• W1520171640 modified "2023-10-16" @default.
• W1520171640 title "A 256 kb nonvolatile ferroelectric memory at 3 V and 100 ns" @default.
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• W1520171640 doi "https://doi.org/10.1109/isscc.1994.344646" @default.
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