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• W1520200659 abstract "Large-grained polycrystalline silicon (poly-Si) films were prepared on foreign substrates by epitaxial thickening of seed layers. The seed layers were formed by the aluminum-induced layer exchange (ALILE) process which is based on aluminum-induced crystallization (AIC) of amorphous silicon (a-Si). The epitaxial thickening was carried out at two different temperature regimes (low- and high-temperature approach). Using these large-grained poly-Si films first thin-film solar cells have been prepared. The best poly-Si thin-film solar cell obtained so far has reached an efficiency of 4.5% (high-temperature approach)." @default.
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• W1520200659 date "2005-08-10" @default.
• W1520200659 modified "2023-09-24" @default.
• W1520200659 title "Large-grained polycrystalline silicon thin-film solar cells using AIC seed layers" @default.
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• W1520200659 doi "https://doi.org/10.1109/pvsc.2005.1488295" @default.
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