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• W1521174826 abstract "We investigate the effect of crystalline indium–gallium–zinc-oxide (c-IGZO) thin films on device performance, and evaluate the device reliability of c-IGZO under positive/negative bias stress with/without illumination. The crystal structure of deposited-IGZO thin film is controlled by annealing temperatures, and the transition from an amorphous to a crystalline structure is observed at above 800 °C. Even though the c-IGZO thin-film transistors (TFTs) exhibit lower carrier mobility, compared with amorphous IGZO (a-IGZO) TFTs, the remarkable improvement of the device reliability for the c-IGZO TFTs is observed especially under the bias stress with illumination. This comes from lower defect density compared with the a-IGZO film." @default.
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• W1521174826 date "2015-09-01" @default.
• W1521174826 modified "2023-10-17" @default.
• W1521174826 title "Reliability of Crystalline Indium–Gallium–Zinc-Oxide Thin-Film Transistors Under Bias Stress With Light Illumination" @default.
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• W1521174826 doi "https://doi.org/10.1109/ted.2015.2458987" @default.
• W1521174826 hasPublicationYear "2015" @default.
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