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• W152321859 abstract "Format ion of the nanoscale inclusions is an effective way to control the properties of semiconductors, when required characteristics of the material cannot be achieved by the standard method of doping. Typically, these inclusions are dielectric, i.e. possess lower conductivity than the semiconducting matrix. Formation of the metallic inclusions, i.e. regions with higher conductivity than that of matrix, opens completely new perspectives to control material properties. There is demonstrated that the metallic clusters of radiation defects generated in single-crystalline silicon by the high-energy proton irradiated may be transformed into the dielectric ones and vice versa through a certain cycle of isochronous annealing." @default.
• W152321859 created "2016-06-24" @default.
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• W152321859 date "2013-01-01" @default.
• W152321859 modified "2023-09-26" @default.
• W152321859 title "Nano-Sized Inclusions Influence on Semiconducting Material: Proton-Irradiated Silicon" @default.
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