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- W1523493678 abstract "SiO/sub 2//Si/sub 3/N/sub 4/ double layer has better charge storage stability than SiO/sub 2/ single layer. The charge storage mechanism of SiO/sub 2//Si/sub 3/N/sub 4/ has been the subject of interest for many researchers. This paper investigates the electrical characteristics of thermal oxide and the atmospheric pressure chemical vapor deposition (APCVD) Si/sub 3/N/sub 4/ using high frequency capacitance voltage measurements. Additionally, this paper describes the capacitance-voltage characteristics of SiO/sub 2//Si/sub 3/N/sub 4/ double layer obtained through Athena, a semiconductor device simulation tool made by Silvaco, Inc." @default.
- W1523493678 created "2016-06-24" @default.
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- W1523493678 date "2004-11-13" @default.
- W1523493678 modified "2023-09-25" @default.
- W1523493678 title "Charge storage characteristics of SiO/sub 2//Si/sub 3/N/sub 4/ double layer electret" @default.
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- W1523493678 doi "https://doi.org/10.1109/icsd.2004.1350317" @default.
- W1523493678 hasPublicationYear "2004" @default.
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