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• W1524498240 abstract "The paper presents the process design, simulation and characterization of a silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG MOSFET) with Al metal gate. The proposed structure is an N-channel device, using aluminum nitride (AlN) as gate dielectric. The fully depleted SOI-based DG ISFET compatible with the complementary metal-oxide-semiconductor (CMOS) process is considered to be a very promising bio-chemical sensor. Silvaco® TCAD tool is used to perform process design and simulations. The simulated and experimental results are compared, and are found to be in good agreement." @default.
• W1524498240 created "2016-06-24" @default.
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• W1524498240 date "2015-06-01" @default.
• W1524498240 modified "2023-09-24" @default.
• W1524498240 title "Simulation and characterization of dual-gate SOI MOSFET, on-chip fabricated with ISFET" @default.
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• W1524498240 doi "https://doi.org/10.1109/isvdat.2015.7208080" @default.
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