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- W1524761569 abstract "High energy ion implantation forms, together with submicron lithography, trench technology, rapid thermal multiprocessing and simulation programs, are a powerful means of fabricating the tiny transistor structures of the future. Several cross-sections of silicon devices, some of which are already known from the literature, are discussed. The benefits of implantations at energies between 200 and 2000 keV are shown." @default.
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- W1524761569 title "High energy implanted transistor fabrication" @default.
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- W1524761569 doi "https://doi.org/10.1016/0921-5107(89)90070-6" @default.
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