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- W1528253313 abstract "Publisher Summary This chapter focuses on recent developments in the field of laser crystallization of Silicon (Si) and explores the fields of research, such as in situ characterization methods, theory of phase-change processes induced by excimer laser annealing, laser interference crystallization, and the structural and electronic properties of laser-crystallized poly-Si. Experimental data on the microscopic mechanisms governing the excimer laser-induced recrystallization of a-Si is presented. The chapter discusses the essential models developed to account for laser-induced phase changes in single crystal and amorphous silicon. A mathematical model of non-equilibrium phase transitions in a binary system of semiconductor elements is presented in the chapter. The laser interference crystallization of amorphous thin films is introduced. This technique combines conventional laser crystallization with holography by interfering two or more coherent laser pulses on the surface of an amorphous semiconductor. Laser crystallization introduces stress in the resulting poly-Si films." @default.
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- W1528253313 date "2003-01-01" @default.
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- W1528253313 title "Chapter 1 Introduction to Laser Crystallization of Silicon" @default.
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- W1528253313 doi "https://doi.org/10.1016/s0080-8784(03)75001-7" @default.
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