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- W1528260054 abstract "Ultra-shallow junction layers are required for deep-submicron complementary metal-oxide-semiconductor transistors and quantum devices. The use of low temperature Si molecular beam epitaxy (MBE) has been investigated for the formation of 10 nm ultra-shallow doped layers. Uniformly B-doped Si layers, B delta-doped Si, and uniformly B-doped Si1−x Gex (x=0, 0.2, or 0.4) layers have been studied. Regardless of the growth technique (uniform versus delta-doped) or Ge concentration, the sheet resistance of the optimally-doped, as-grown samples were equivalent to idealized, box profiles having a carrier concentration equal to the B solid solubility limit in Si, 6×1020/cm3, which is a substantial improvement over the best reported, ion implanted shallow layers. The B in the as-grown, optimally-doped MBE layers is fully electrically active and does not require a post-growth anneal. The thermal budget of the layers was established so that the layers can be employed in a device fabrication process. The MBE-grown shallow-doped layers were not affected by 10 min thermal processing up to 700 °C. While substantial B redistribution occurred as a result of the 800 °C 10 min anneal, the sheet resistances of the MBE-grown layers are still less than ion implanted samples having the same junction depth. In addition, it was observed that the Ge alloy layers impeded the diffusion of B at 800 °C." @default.
- W1528260054 created "2016-06-24" @default.
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- W1528260054 date "2002-11-12" @default.
- W1528260054 modified "2023-10-16" @default.
- W1528260054 title "Formation and thermal stability of ultra-shallow p+ junctions in Si and Si1−x Gex formed by molecular beam epitaxy" @default.
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- W1528260054 doi "https://doi.org/10.1063/1.1518766" @default.
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