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- W1528696757 abstract "Publisher Summary This chapter summarizes the capabilities of transmission electron microscopy (TEM) to analyze the defects and the crystallographic changes after ion implantation. First the basic principles of TEM are traced back, along with the details for sample preparation. Then, experimental results demonstrating the ability of the technique to analyze the implantation-induced damage and its annihilation after annealing are presented in the context of silicon material. In particular, the kinetics of end-of-range (EOR) defects is revealed because of the sensitivity of TEM analysis. The formation and the evolution of amorphous layers after high-dose implantation are emphasized The TEM studies are also exemplified as being powerful physical characterization tools for evaluating the quality of new materials under development, for example, separation by implementation of oxygen (SIMOX) or silicon carbide. The various electron microscopy techniques permit a uniquely detailed analysis of the implanted semiconductors highlighting the underling mechanisms of the defect formation during the early stage of implantation below the amorphization threshold. The role of EOR defects as reservoirs able to emit self-interstitials has been shown. The emission of interstitials due to the decrease of EOR defects during annealing and its influence on the diffusion of substitutional dopants are discussed." @default.
- W1528696757 created "2016-06-24" @default.
- W1528696757 creator A5035907111 @default.
- W1528696757 date "1997-01-01" @default.
- W1528696757 modified "2023-09-27" @default.
- W1528696757 title "Chapter 7 Transmission Electron Microscopy Analyses" @default.
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- W1528696757 doi "https://doi.org/10.1016/s0080-8784(08)62679-4" @default.
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