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- W1530128050 abstract "Pb ( Zr,Ti ) O 3 (PZT) films (450 nm thick) were grown on 4H–silicon carbide (SiC) substrates by a pulsed-laser deposition technique. X-ray diffraction confirms single PZT phase without a preferred orientation. Stable capacitance–voltage (C–V) loops with low conductance (<0.1 mS/cm2, tan δ∼0.0007 at 400 kHz) and memory window as wide as 10 V were obtained when 5-nm-thick Al2O3 was used as a high band gap (Eg∼9 eV) barrier buffer layer between PZT (Eg∼3.5 eV) and SiC (Eg∼3.2 eV). High-frequency (400 kHz) C–V characteristics revealed clear accumulation, and depletion behavior. Although the charge injection from SiC is the dominant mechanism for C–V hysteresis in PZT/Al2O3/SiC, negligible sweep rate dependence and negligible applied bias dependence were observed compared to that of PZT/SiC. By using room-temperature photoilluminated C–V measurements, the interface states as well as the charge trapping in the PZT/Al2O3 stacks have been calculated." @default.
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- W1530128050 date "2002-07-22" @default.
- W1530128050 modified "2023-10-03" @default.
- W1530128050 title "Ferroelectric Pb(Zr,Ti)O3/Al2O3/4H–SiC diode structures" @default.
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- W1530128050 doi "https://doi.org/10.1063/1.1497443" @default.
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