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• W1530136784 abstract "We use a simple and controllable method to fabricate GaN-based light-emitting diodes (LEDs) with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching (ICP-RIE). Our experiment results show that the output powers of the LEDs with 22° undercut sidewalls are 34.8 mW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection." @default.
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• W1530136784 date "2013-10-01" @default.
• W1530136784 modified "2023-10-18" @default.
• W1530136784 title "Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching" @default.
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• W1530136784 doi "https://doi.org/10.1088/1674-1056/22/10/106802" @default.
• W1530136784 hasPublicationYear "2013" @default.
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