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- W1530896265 abstract "Graded bandgap p-i-n diode solar cells are fabricated with a-(Si,Ge):H deposited by triode PECVD. These cells are optimized for low energy photon absorption, and are suitable for the bottom cell of a tandem cell structure. Initially, a series of a-(Si,Ge):H films with a wide range of germanium contents were grown to determine the alloyed material quality. The techniques used to characterize the material include electrical and optical measurements, as well as EDS, TEM and SEM analysis. Reproducibly high quality films were deposited using low chamber pressures (~20mTorr), high levels of hydrogen dilution, substrate temperatures around 300 °C, and a negative substrate bias. The variation in material characteristics with germanium content is reported including darkand photoconductivity, subgap absorption, Tauc gap and activation energy. A series of constant bandgap devices were also fabricated to determine the hole transport parameters, as well as the Urbach energy. A new computer model for the internal electric fields is used to analyze the device results. The model determines the quantum efficiency from the internal electric field profile and the hole ti'ansport parameters. The hole mobility lifetime product ([Xt) has not been well characterized in a-(Si,Ge):H, and is quantified for the first time here using the computer model. The" @default.
- W1530896265 created "2016-06-24" @default.
- W1530896265 creator A5017174260 @default.
- W1530896265 date "2018-08-13" @default.
- W1530896265 modified "2023-10-17" @default.
- W1530896265 title "Design and modeling of graded bandgap amorphous silicon-germanium solar cells fabricated by plasma enhanced chemical vapor deposition" @default.
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- W1530896265 doi "https://doi.org/10.31274/rtd-180813-11396" @default.
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