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- W1531170416 abstract "An experimental investigation was made of laser-stimulated etching of a II-VI semiconductor in liquid solutions containing Br2. Rectangular channels were etched in CdxHg1 – xTe at rates up to 1 cm/s. The spatial resolution of the channels was ~ 5 μm to a depth of ~ 20 μm. The etching kinetics was governed by the thermal diffusion instability of the etchant layer." @default.
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- W1531170416 date "1990-07-31" @default.
- W1531170416 modified "2023-09-27" @default.
- W1531170416 title "Kinetics of laser-stimulated etching of Cd<sub><i>x</i></sub>Hg<sub>1 –<i>x</i></sub>Te" @default.
- W1531170416 cites W1971590762 @default.
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- W1531170416 doi "https://doi.org/10.1070/qe1990v020n07abeh007117" @default.
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