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- W1531485349 abstract "We report on the fabrication of an n-channel metal/ferroelectric/insulator/semiconductor (MFIS)-Field Effect Transistor (FET) using Al/SrBi 2 Ta 2 O 9 /CeO 2 /Si(100) structures and its characterization, as well as on the preparation of SrBi 2 Ta 2 O 9 ferroelectric films at low temperatures. SrBi 2 Ta 2 O 9 ferroelectric films fabricated at about 650° C on a Pt/SiO 2 /Si substrate had a remanent polarization ( P r ) of 7.8 µ C/cm 2 . The drain current-gate voltage ( I D - V G ) characteristics of MFIS-FET using the Al/SrBi 2 Ta 2 O 9 /CeO 2 /Si(100) structure showed threshold hysteresis due to the ferroelectric properties of the SrBi 2 Ta 2 O 9 film. Nonvolatile memory operations of the MFIS-FET were demonstrated by observing its drain current ( I D ) which was controlled by previously applied write voltages." @default.
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- W1531485349 date "1997-09-01" @default.
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- W1531485349 title "Preparation of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> Film at Low Temperatures and Fabrication of a Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Using Al/SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/CeO<sub>2</sub>/Si(100) Structures" @default.
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- W1531485349 doi "https://doi.org/10.1143/jjap.36.5908" @default.
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