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- W1532165089 abstract "Technology for growth of ZnO wide bandgap semiconductor crystal has improved greatly using RS (radical source)-MBE. Recently, ZnO is now gathering a great interest for optoelectrical devices applications and the importance of bandgap engineering in ZnO material system is increasing. We have reported a new bandgap engineering technique using bandgap bowing of the ZnO/sub 1-x/Se/sub x/ anion compound semiconductors. In previous work, the ZnO/sub 1-x/Se/sub x/ bandgap bowing parameter had been obtained and the difficulty of Se incorporation in ZnO crystal was suggested. We report on the interesting Se incorporation characteristics in ZnO." @default.
- W1532165089 created "2016-06-24" @default.
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- W1532165089 date "2003-06-25" @default.
- W1532165089 modified "2023-09-25" @default.
- W1532165089 title "Natural ordering of ZnO/sub 1-x/Se/sub x/ grown by radical source MBE" @default.
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- W1532165089 doi "https://doi.org/10.1109/mbe.2002.1037855" @default.
- W1532165089 hasPublicationYear "2003" @default.
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