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• W1533695329 abstract "We report on the optoelectronic properties of the aligned SnO2 nanowire (NW) field effect transistors (FETs) fabricated via a sliding transfer of NWs grown by chemical vapor deposition. Photocurrent measurements with polarized UV light confirmed a well aligned NWs along the channels. UV photosensitivity of ∼107 at the gate voltage Vg=−40 V was obtained due to a small dark-current at the turn-off state of FET. The dynamic response of the photocurrent became faster for the higher mobility SnO2 NW FETs. We expect our aligned SnO2 NW FETs will be useful as polarized UV detectors with a high sensitivity." @default.
• W1533695329 created "2016-06-24" @default.
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• W1533695329 date "2009-07-27" @default.
• W1533695329 modified "2023-09-26" @default.
• W1533695329 title "Photoconductance of aligned SnO2 nanowire field effect transistors" @default.
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• W1533695329 doi "https://doi.org/10.1063/1.3190196" @default.
• W1533695329 hasPublicationYear "2009" @default.
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