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- W1533964227 abstract "This chapter covers the main aspects of the wet surface preparation that are used in current semiconductor industry and research laboratories. It describes the cleaning, the etching and the final rinsing-drying sequence. Mechanisms, chemical reactions, impact of concentration, temperature and time are reported to allow a better understanding of the wet surface preparation challenges. Ammonium hydrogen peroxide mixture (APM), hydrochloric acid hydrogen peroxide mixture (HPM), and sulfuric acid hydrogen peroxide mixture (SPM) are known to be good particle removal solutions. Hydrofluoric acid (HF) and buffered oxide etchant or BOE are used to address wet etching." @default.
- W1533964227 created "2016-06-24" @default.
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- W1533964227 date "2013-02-18" @default.
- W1533964227 modified "2023-10-17" @default.
- W1533964227 title "The Chemistry of Wet Surface Preparation" @default.
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- W1533964227 doi "https://doi.org/10.1002/9781118578070.ch3" @default.
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