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- W1535620904 abstract "Metal oxide thin-film transistors based on high-k dielectrics (ZrO x , HfO x , Al 2 O x ) are a promising technology with attractive performance (µ eff ∼ 10–100 cm2/Vs, On/Off > 107) and high transparency (80–90%) [1]. Solution-processed routes to oxide TFTs can potentially leverage printing technologies to enhance material utilization and throughput. However, realizing the true benefits of solution-processed oxide TFTs requires integrating dielectrics, semiconductors, and conductors that are printable and transparent. To date, there have been few reports of fully solution-processed, transparent oxide TFTs [2]. Full oxide integration is difficult because solution-processed transparent conducting oxides (TCO), such as ITO (Tin-doped indium oxide) and ATO (Antimony-doped tin oxide), reach acceptable conductivity (100–1000 S/cm) only after annealing at 400°C – 500°C, while promising high-k dielectrics, such as ZrO x , crystallize at these temperatures, resulting in high leakage and poor reliability. Here, we demonstrate that doping zirconia with lanthanum can reduce leakage and improve low-frequency dispersion, resulting in a robust dielectric for printed oxide TFTs. We apply these dielectrics in ZnO TFTs, achieving mobilities > 6 cm2/Vs and On/Off ratios > 106." @default.
- W1535620904 created "2016-06-24" @default.
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- W1535620904 date "2015-06-01" @default.
- W1535620904 modified "2023-10-16" @default.
- W1535620904 title "Engineering high-k La<inf>x</inf>Zr<inf>1−x</inf>O<inf>y</inf> dielectrics for high-performance fully-solution-processed transparent transistors" @default.
- W1535620904 doi "https://doi.org/10.1109/drc.2015.7175635" @default.
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